Exploring Quantum Emitters in Hexagonal Boron Nitride for Quantum Computing

Recent research has highlighted the potential of hexagonal boron nitride (hBN) as a platform for quantum information processing. The paper titled "Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride" by Song Li, Anton Pershin, and Adam Gali, submitted to arXiv on August 24, 2024, explores the properties of optically addressable defect qubits within this two-dimensional material.

The study connects the photostability and spectral diffusion of quantum emitters to donor-acceptor pairs (DAP) in hBN using ab initio calculations. The authors found that these DAPs can exhibit optically detected magnetic resonance (ODMR) signals for the acceptor component of the defect pair, particularly when subjected to non-zero magnetic fields. This discovery is significant as it provides insights into the microscopic origins of bright defect qubits previously reported in hBN, which have been elusive until now.

The implications of this research are substantial for the field of quantum computing. The findings suggest that the donor-acceptor pair model could serve as a framework for identifying and optimizing defect qubits in hBN, which may enhance the performance of quantum applications. The ability to leverage the unique properties of two-dimensional materials like hBN could lead to advancements in scalable quantum information technologies.

For further details, the paper can be accessed at arXiv: 2408.13515.